53012 tkim tc-00002763/62005qb msim tb-00001301 / 81004qb tsim tb-00000018 no.7767-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2SK3747 n-channel power mosfet 1500v, 2a, 13 , to-3pf-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance, low input capacitance, ultrahigh-speed switching ? high reliability (adoption of hvp process) ? attachment workability is good by mica-less package ? avalanche resistance guarantee speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 1500 v gate-to-source voltage v gss 35 v drain current (dc) i d 2a drain current (pulse) i dp pw 10 s, duty cycle 1% 4 a allowable power dissipation p d 3.0 w tc=25 c50w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 41 mj avalanche current *2 i av 2a note : * 1 v dd =50v, l=20mh, i av =2a (fig.1) * 2 l 20mh, single pulse package dimensions unit : mm (typ) 7538a-002 ordering number : en7767b product & package information ? package : to-3pf-3l ? jeita, jedec : sc-94 ? minimum packing quantity : 30 pcs./magazine marking electrical connection 1 3 2 k3747 lot no. 1 : gate 2 : drain 3 : source to-3pf-3l 15.5 5.5 3.0 0.9 0.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.5 3.3 10.0 25.0 24.5 19.3 5.45 5.45 2.0 2SK3747-1e
2SK3747 no.7767-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 1500 v zero-gate voltage drain current i dss v ds = 1200 v, v gs =0v 100 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 2.5 3.5 v forward transfer admittance | yfs | v ds =20v, i d = 1 a 0.7 1.4 s static drain-to-source on-state resistance r ds (on) i d = 1 a, v gs =10v 10 13 input capacitance ciss v ds =30v, f=1mhz 380 pf output capacitance coss 70 pf reverse transfer capacitance crss 40 pf turn-on delay time t d (on) see fig.2 12 ns rise time t r 37 ns turn-off delay time t d (off) 152 ns fall time t f 59 ns total gate charge qg v ds =200v, v gs =10v, i d =2a 37.5 nc gate-to-source charge qgs 2.7 nc gate-to-drain ?miller? charge qgd 20 nc diode forward voltage v sd i s =2a, v gs =0v 0.88 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK3747-1e to-3pf-3l 30pcs./magazine pb free 50 50 v dd l 10v 0v 2SK3747 pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =1a r l =200 v dd =200v v out 2SK3747 v in 10v 0v v in
2SK3747 no.7767-3/7 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it07130 it07131 0 0 4.0 3.5 3.0 2.5 2.0 1.5 50 45 40 10 30 525 15 20 35 1.0 0.5 0 0 3.0 2.5 2.0 1.5 20 18 16 412 210 68 14 1.0 0.5 10v 8v v gs =4v 5v 6v tc= --25 c 25 c 75 c tc=25 c pulse v ds =20v pulse static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d it07132 it07133 --50 --25 0 25 50 75 100 125 150 0 30 25 10 20 15 5 it07135 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 it07134 25 c --25 c tc=75 c 0.1 357 2357 23 1.0 1.0 2 3 5 7 2 3 5 0.1 v ds =20v 25 c tc= --25 c 75 c v gs =0v i d =1a v gs =10v 0 0 30 25 20 15 20 18 16 412 210 68 14 10 5 i d =1a tc=75 c 25 c --25 c drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it09037 v dd =200v v gs =10v t d (off) t f t r t d (on) it09038 f=1mhz ciss coss crss 100 10 3 2 3 2 5 5 7 0.1 1.0 23 57 23 0 7 100 10 1000 7 5 5 3 2 5 3 2 3 2 50 30 5152025354045 10
2SK3747 no.7767-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a a s o v gs -- qg it07139 it07138 0 0 1 2 3 4 5 6 7 8 40 10 9 10 20 30 v ds =200v i d =2a 1.0 2 3 5 7 2 3 5 7 2 3 5 7 0.1 0.01 23 57 23 57 23 57 1.0 10 100 1000 3 2 operation in this area is limited by r ds (on). 100 s 1ms 10ms 100ms i d =2a i dp =4a (pw 10 s) dc operation tc=25 c single pulse ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc it07140 it07141 0 0 20 40 0.5 1.0 60 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 0 20 40 20 10 60 40 30 80 100 120 50 60 140 160
2SK3747 no.7767-5/7 magazine speci cation 2SK3747-1e
2SK3747 no.7767-6/7 outline drawing 2SK3747-1e mass (g) unit 5.5 * for reference mm
2SK3747 ps no.7767-7/7 note on usage : since the 2SK3747 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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